Registration Dossier

Administrative data

Workers - Hazard via inhalation route

Systemic effects

Acute/short term exposure
DNEL related information

Local effects

Long term exposure
Hazard assessment conclusion:
DNEL (Derived No Effect Level)
Value:
20 µg/m³
Acute/short term exposure
DNEL related information

Workers - Hazard via dermal route

Systemic effects

Acute/short term exposure
DNEL related information

Workers - Hazard for the eyes

Local effects

Hazard assessment conclusion:
no hazard identified

Additional information - workers

References:

DIN/EN 481 ”Festlegung der Teilchengrößenverteilung zur Messung luftgetragener Partikel”

ECHA, 2010. Guidance on information requirements and chemical safety assessment, Chapter R.8: Characterisation of dose [concentration]-response for human health Reference: ECHA-2010-G-1, December 2010

ECETOC TR 110, 2010. Guidance on Assessment Factors to Derive a DNEL . Technical Report No. 110. Brussels, October 2010 .


See attached report “Derivation of a DNEL (Inhalation local and systemic) for Gallium Arsenide“ (Bomhard, 2010a).

General Population - Hazard via inhalation route

Systemic effects

Acute/short term exposure
DNEL related information

Local effects

Acute/short term exposure
DNEL related information

General Population - Hazard via dermal route

Systemic effects

Acute/short term exposure
DNEL related information

General Population - Hazard via oral route

Systemic effects

Acute/short term exposure
DNEL related information

General Population - Hazard for the eyes

Additional information - General Population

Gallium arsenide (GaAs) is a high-purity intermetallic compound which is used only in very specific high-tech industries, such as high frequency (HF) technology and optoelectronics. Typical applications for GaAs substrates in high frequency technology are HF-amplifiers, receivers and switches, for example in mobile phones and wireless network appliances. In optoelectronics, key uses of GaAs are in light-emitting diodes (e.g. in displays, electric lighting and signalling systems) and lasers (e.g. for DVD/CD players, but also in lasers for high precision cutting and welding). GaAs in its solid form is used in very tiny amounts in such devices. A typical example has been provided by the lead registrant, i.e. Freiberger Compounds Materials GmbH:

Low-noise amplified module by Triquint Semiconductor: Typical applications: fibre-optic networks, mobile communication, measurement equipment. Size: 1.30 mm x 1.06 mm x 0.1 mm. Content of GaAs: 0.73 mg (corresponding to 0.36 mg As).

In all these uses and applications a very small amount of GaAs is included and encapsulated in the devices in solid form. Based on this assessment there are no known or reasonably foreseeable uses where members of the general population could come into direct contact with GaAs. Further, it is not reasonably foreseeable that members of the general public could be exposed to GaAs indirectly via the environment to an extent which would be distinguishable from natural background concentrations of both elements. Very few production and use sites have been identified in the EU. All sites represent high-tech industrial facilities, which handle GaAs in massive form and in small amounts. Emissions to the environment are negligible. Also, since the total production volume of GaAs in the EU is below 100 tonnes per year, an assessment of indirect exposure is usually not required in accordance with the “ECHA Guidance on information requirements and chemical safety assessment Chapter R.16: Environmental Exposure Estimation (Version 2, May 2010)”. Based on this assessment DNELs are only required for workers (see above) and DNELs for the general population are not derived.