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Please be aware that this old REACH registration data factsheet is no longer maintained; it remains frozen as of 19th May 2023.

The new ECHA CHEM database has been released by ECHA, and it now contains all REACH registration data. There are more details on the transition of ECHA's published data to ECHA CHEM here.

Diss Factsheets

Physical & Chemical properties

Vapour pressure

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Administrative data

Endpoint:
vapour pressure
Type of information:
calculation (if not (Q)SAR)
Remarks:
Migrated phrase: estimated by calculation
Adequacy of study:
key study
Reliability:
2 (reliable with restrictions)

Data source

Reference
Reference Type:
other: Authoritative data base
Title:
Danish QSAR study for CAS No.: 122-52-1
Author:
Danish EPA Model
Year:
2012
Bibliographic source:
QSAR predictions by Danish Environmental Protection Agency (EPA)model powered by OASIS database:-EPI Suite (MPBBPVP) Various versions of EPI Suite dating back from 1990-2004

Materials and methods

Test guideline
Qualifier:
according to guideline
Guideline:
other: Modelling Database
Principles of method if other than guideline:
The vapour pressure is estimated with a modified version of the Grain method.
GLP compliance:
not specified
Type of method:
other: Modified Grain Method

Test material

Constituent 1
Chemical structure
Reference substance name:
Triethyl phosphite
EC Number:
204-552-5
EC Name:
Triethyl phosphite
Cas Number:
122-52-1
Molecular formula:
C6H15O3P
IUPAC Name:
triethyl phosphite
Details on test material:
- Name of test material (as cited in study report): triethyl phosphite
- Substance type: Organic
- Physical state: liquid

Results and discussion

Vapour pressure
Vapour pressure:
0.872 mm Hg
Remarks on result:
other: Other details not available

Applicant's summary and conclusion

Conclusions:
According to Danish QSAR vapour pressure of triethyl phosphite is estimated as 0.872 via Modified Grain Method.
Executive summary:

According to Danish QSAR vapour pressure of triethyl phosphite is estimated as 0.872 via Modified Grain Method.